Abstract
By utilizing flat display panel manufacturing equipment and innovative techniques, we have successfully developed short channel Top‐gate amorphous InGaZnO4 thin‐film transistors (TG a‐IGZO TFTs) at Gen4.5. Despite the challenge of facing issues with the lateral diffusion of hydrogen during process and short channel effects, we managed to optimize the uniformity and drain‐induced barrier lowering with the novel structure of TFTs. After optimizing the device structure, we have achieved short channel TFTs with channel length of 1.3um, Vth of ‐ 0.03V, mobility of 9.77 cm2 /Vs, and DIBL of 29mV/V, and successfully make a demo of 7.1inch miniLED with the ultra short channel TFTs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
