Abstract
AbstractWe fabricated TFTs with ZnO thin film as an active layer. Electrical bias stress test of ZnO TFT was also carried out. The results of stress test of ZnO TFT differed from those of a‐Si:H TFT. Therefore, the instability of ZnO TFT cannot be explained by conventional degradation mechanisms of a‐Si:H TFT. The variance of some factors in the fabrication process showed a certain trend in the results of bias stress. A possible mechanism of abnormal behavior under the gate bias stress was discussed.
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