Abstract
We improved the contact properties by inserting a self‐assembled monolayer at the interface between a‐IGZO and metal electrode. For high‐resolution and high‐speed displays, the transistor channel length needs to be reduced without short channel effects. In case of Al electrode, it easily diffuses into a‐IGZO and forms AlOx at the interface, resulting in a considerable contact resistance increase. In our approach, we successfully suppressed Al diffusion by self‐assembled monolayer treatment on a‐IGZO thin film. The thickness of AlOx was significantly reduced, which was verified by transmission electron microscopy images. With a proper self‐assembled monolayer treatment, the contact resistance was decreased by 36%.
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