Abstract
AbstractAnalytical current and capacitance models for amorphous Indium‐Gallium‐Zinc‐Oxide Thin film transistors (a‐IGZO TFTs) are proposed for application to the simulation of a‐IGZO TFT‐based circuits. The accuracy of the proposed models are verified by comparing the measured I‐V and C‐V characteristics with calculated ones and the simulation result of a‐IGZO TFT‐based circuits. The proposed models are expected to be useful both for the optimization of fabrication process and for the prospective estimation of the effect of process conditions on the circuit performance.
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