Abstract
AbstractIn this paper, we have fabricated TFTs with a‐IGZO. DC magnetron sputtering was employed for a‐IGZO deposition. The a‐IGZO TFTs were fabricated and evaluated using various deposition conditions with sputtering power and repeating the deposition of a‐IGZO. All TFTs were annealed after the deposition of etch stopper to maximize stability between a‐IGZO and etch stopper. Bias temperature stress characteristics were relevant to the initial property of a‐IGZO before annealing. Very stable TFTs were achieved optimizing the condition of a‐IGZO deposition and annealing after etch stopper. The Vth shift was 0.8V under positive bias temperature stress (Vgs=30V, 3600s, 60 °C). Also, the 17‐inch IPS AMLCD display panel with a‐IGZO TFTs was demonstrated.
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