Abstract
Nowadays, temperature‐lowering during process has been discussed as an important problem due to high‐integrity of semiconductor technology. New low‐temperature deposition technologies are introduced due to above problem. This research compared between characteristics of traditional PECVD thin film and characteristics of SiNx film which is deposited by LAPECVD (Laser Assisted PECVD) applied deposition method. From measurements of the thickness, surface topography, etch rate, and refractive indices, we demonstrate the enhanced quality of SiNx films fabricated by CO2 laser irradiation. The sample that was deposited with LAPECVD method in 35°C has similar etch rate to SiNx film which was deposited from more than 250°C with PECVD process. Inorganic thin film which is produced with LAPECVD can be applied to OLED element as passivation layer to suggest application possibility on flexible display.
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