P‐196: Late‐News‐Poster: Low‐Temperature All Sputter IGZO‐TFT Fabricated with Amorphous Metal Thin‐Films

Abstract

The flexibility, strength, and smoothness of amorphous metal thin‐films have enabled the development of a new generation of high‐performance diode and transistor devices for flat panel and thin‐film electronic applications. This work reports on recent progress toward the development of amorphous metal thin‐film transistors. The etch stop layer type transistors reported in this work demonstrate field effect mobilities as high as 20 cm2/V·s, depending on the processing conditions. All thin‐film layers for these amorphous metal thin‐film transistors were deposited using sputter physical vapor deposition techniques at room temperature. The low temperature processing, as well as the strong and flexible nature of amorphous metals, makes amorphous metal thin‐film transistor technology potentially useful for robust high‐speed highly flexible electronics.