Abstract
In the present work we developed advanced nano‐scale SIMS technology and investigated oxide TFTs Vth shift behavior. Not only vertical but also lateral resolutions were improved by modification of geometry factors and optimized the impact energy. By applying developed method, we found that a halogen element was directly modulated electrical property of oxide TFTs by generating free electrons. Both the patterning and post‐fabrication annealing processes had to be precisely controlled.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
