Abstract
In the present work we developed advanced nano‐scale SIMS technology and investigated oxide TFTs Vth shift behavior. Not only vertical but also lateral resolutions were improved by modification of geometry factors and optimized the impact energy. By applying developed method, we found that a halogen element was directly modulated electrical property of oxide TFTs by generating free electrons. Both the patterning and post‐fabrication annealing processes had to be precisely controlled.
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