Abstract
AbstractLTPS TFT backplane for Large Scale AMOLED Device was fabricated using a new special Joule‐Heating Induced Crystallizing (JIC) method. A mass production compatible process for large scale AMOLED Product was newly developed using JIC method. By adopting the new process architecture, additional conducting layer was removed and additional processes were dramatically reduced for mass production. In addition, laser tool or long‐time furnace annealing process was removed in LTPS process. Poly‐Si showed a wide range of crystallinity by changing processing parameters and the p channel TFTs of this work exhibited a mobility of up to 25.4 cm2/V⋅sec, threshold voltage of −1.5V, sub‐threshold slope of 0.67 V/dec, and on/off ratio of 4 × 104. We believe that this technology can be successfully applied to the mass production of large scale AMOLED TV.
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