Abstract
Top-contact pentacene TFTs were successfully scaled down from 20 μm to 1.8 μm for the channel length (LC) by using silicon nitride membrane shadow mask. When LC was reduced to 1.8 μm, pentacene TFTs with the grain size of a few micrometer showed poor on/off current ratio (Ion/Ioff) of 103 and high mobility of 0.25 cm2/Vsec, whereas pentacene TFTs with the grain size of sub-micrometer resulted in low mobility of 0.08 cm2/Vsec, but good Ion/Ioff of 5.7×106. To obtain both high mobility and good Ion/Ioff for the scaled-down OTFTs at the same time, two-step-deposition (TSD) technique was proposed and resulted in Ion/Ioff of 107 as well as mobility of 0.19 cm2/Vsec even for the TFT with LC of 1.8 μm. To our best knowledge, this result is one of the best electrical characteristics among the reported electrical performance of OTFTs scaled down to LC of 1.8 μm.
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