Abstract
AbstractIn this paper, we investigated the effects of high‐pressure annealing (HPA) in solution‐processed zinc tin oxide (ZTO) thin‐film transistors (TFTs). The O2‐HPA‐treated ZTO TFTs showed higher electrical performances in aspect of an on‐current (Ion), saturation mobility (μsat) and bias stability. The O2‐HPA treatment could contribute to the elimination of defect states that originated from the oxygen vacancies in solution‐processed metal‐oxide films. The 350°C O2‐HPA‐treated ZTO TFT showed μsat, threshold voltage (Vth), subthreshold slope (S.S) and on/off ratio of 2.35 cm2/V·s, 4.36 V, 0.58 V/dec., and 1.16times107, respectively.
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