Abstract
This paper introduces a convenient technique for improving AMOLED image sticking performance which is currently a tough problem in the display industry. Based on our experimental results together with TFT device simulation outcome, by changing the L‐SWTFT (Dual‐gate SWTFT, T2) gate size in our 7T1C circuit, the outstanding voltage‐writing ratio in charging phase is realized, so as to get better image sticking performance. Different from the conventional image sticking improvement method, this technique provides a more feasible design‐related change proposal to replace the process optimization of traditional TFT‐related film quality and interface. Only by reducing the channel length of L‐SWTFT, the driver TFT gate working voltage can be easier to be written to the target value right after the L‐SWTFT Ion increases, so as to refresh the influence of residual electrical charges due to picture switching from the previous frame. Our image sticking evaluation results reveal the average ISFOM score for T0 is increased by about 14.3% with the maximum score increased by about 28.1% and the average ISFOM score for T300 is improved by 23.4% with the best value of 42.2% when the L‐SWTFT length is reduced, which shows a significant improvement for image sticking performance.
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