Abstract
For the purpose of a reliable driving back-plane in AMOLED application, the Heat Retaining Enhanced Crystallization (HREC) technology is developed. A heat-retaining capping layer is applied in order to effectually slow down the heat dissipation and to retain the duration of melt, hence an enlarged poly-si grain lateral growth is obtained. With single-shot laser irradiation, a 7um-well location-controlled-n ploy Si active layer is obtained, exhibiting a high mobility (uFE=260cm2/Vsec) for the proposed dual-gate TFT device.
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