Abstract
Quantum dot light‐emitting diodes (QLEDs) have garnered significant attention due to their outstanding optical and electrical properties. Furthermore, there have been many attempts to fabricate QLEDs on the flexible substrates for the application of wearable devices. However, flexible QLEDs face the challenge of instability under thermal heat, due to the low thermal conductivity of the substrates. In this study, we present the InP‐based QLEDs on 1 µm thick polyethylene naphthalate substrates, coated with aluminum for the heat dissipation. The coated Al layer can effectively dissipate the generated heat due to its high conductivity, while maintaining the flexibility of the substrates.
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