Abstract
We report the fabrication of high‐performance indium‐gallium oxide (IGO) thin‐film transistors (TFTs) via plasma‐enhanced atomic‐layer‐deposition (PE‐ALD) process with cation composition ratio variation. With accurate control of the composition ratio, IGO(12:3) TFTs showed stable characteristics along with high field‐effect mobility (μFET) of 70.69 cm 2 /Vs. Furthermore by increasing the gallium ratio, IGO(6:3) TFTs showed extremely stable characteristics with threshold voltage (VTH) variations lower than 0.1 V in both positive bias stress (PBS) and negative bias stress (NBS) conditions.
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