Abstract
AbstractHigh‐performance fully transparent Hafnium‐doped Zinc Oxide Thin Film Transistors (HZO TFTs) were successfully fabricated on glass substrate at Low Temperature. Effects of the oxygen partial pressure on characteristics of HZO TFTs were studied. We achieved the optimum oxygen partial pressure condition and fabricated high‐performance fully transparent HZO TFTs. We also demonstrated the uniformity of TFTs on the whole glass. Furthermore, we also studied Ti‐doped Zinc Oxide TFTs and Tin‐doped Zinc Oxide TFTs at the same time, which are proven to be promising. Besides, our group also studied Ti‐doped Zinc Oxide TFTs and Tin‐doped Zinc Oxide TFTs at the same time.
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