Abstract
The sidewall passivation is essential to achieve high micro light‐emitting diode (LED) efficiency. We investigated different sidewall passivation strategies on InGaN/GaN blue nLED, including Thermal ALD and PEALD Al2O3. The characterization of temperature and laser excitation‐dependent photoluminescence (PL) and time‐resolved photoluminescence (TRPL) were observed to determine the efficiency. Sidewall passivated‐nLED device was fabricated and characterized. The device exhibits extremely high brightness, even at low operation current.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
