Abstract
The sidewall passivation is essential to achieve high micro light‐emitting diode (LED) efficiency. We investigated different sidewall passivation strategies on InGaN/GaN blue nLED, including Thermal ALD and PEALD Al2O3. The characterization of temperature and laser excitation‐dependent photoluminescence (PL) and time‐resolved photoluminescence (TRPL) were observed to determine the efficiency. Sidewall passivated‐nLED device was fabricated and characterized. The device exhibits extremely high brightness, even at low operation current.
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