Abstract
Density effects of IGZO films were studied based on DFT calculations, and the electrical and physical properties between the high‐density film and the conventional film were compared. As the density increased, the carrier concentration, hole mobility, and the optical energy band gap of the IGZO film increased. Additionally, micro‐pore defects were not observed in the high‐density film unlike the conventional film through HR‐TEM cross‐sectional analysis. Also, we fabricated coplanar TFT devices with different density IGZO films and conducted PBTS and NBTiS reliability tests. The device with high‐density IGZO film was showed superior reliability characteristics
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