Abstract
AbstractIn this paper, we analyze application of amorphous Indium‐Gallium‐Zinc‐Oxide thin film transistors (a‐InGaZnO TFTs) to voltage‐driven pixel electrode circuit that could be used for 4.3‐in. wide video graphics array (WVGA) full color active‐matrix organic light‐emitting displays (AM‐OLEDs). Simulation results, based on a‐InGaZnO TFT and OLED experimental data, show that both device sizes and operational voltages can be reduced when compared to the same circuit using hydrogenated amorphous silicon (a‐Si:H) TFTs. Moreover, the a‐InGaZnO TFT pixel circuit can compensate for the threshold voltage variation (ΔVTH) of driving TFT within acceptable operating error range.
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