Abstract
To predict the effect of hydrogen and oxygen diffusion from the other adjacent layer to oxide semiconductor, we fabricated amorphous IGZO TFT (In‐Ga‐Zn‐O thin film transistor) with various gate insulator (SiOx) layer and various oxygen treatment above gate insulator. Then, simulation was performed to investigate the relationship among the hydrogen and oxygen content of the a‐IGZO and electrical properties of the TFTs. At this time, we obtained a certain diffusion coefficient for oxygen and hydrogen in each layer through deuterium and isotope experiments, and used these as input parameters for the simulation. And we found a high carrier concentration of IGZO was proportional to the increase in the amount of SiH4 gas ratio during the gate insulator deposition. And it was confirmed that the amount of oxygen in the active layer was different according to the oxygen treatment condition on top of the gate insulator. It is thought that oxygen in plasma state was injected into the silicon oxide (SiOx) layer before metal deposition occurred. The oxygen diffusion coefficient in metal is extremely small compared to SiOx, so it is impossible to inject oxygen into SiOx after metal deposition. As a result of applying the models of hydrogen and oxygen conditions, we were able to predict the Vth trend of the measurement results considerably
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