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Abstract
Over the past years, active‐matrix organic light‐emitting diode (AMOLED) has established a commanding position in displays for smart phones, smart watches and TVs. However, AMOLED display still faces challenges in pursuing high‐level performance as TFT and/or OLED suffer device‐level variation and dynamic shifting resulting from the aging effect. Thus, a variety of internal compensation circuits, which are designed to partially compensate these harmful variation and dynamic shifting, have been implemented into pixel circuits of AMOLED products. Previous studies have mainly focused on the instability of TFT device, however the capacitance of OLED device could also affect the overall compensation effect. In this study, the structure‐capacitance relationship of OLED device is systematically presented and the influence of capacitance variation on the pixel circuits at compensation stage is also discussed.
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