Abstract
In the plasma enhanced chemical vapor deposition (PECVD) process of AMOLED encapsulation, masks with different conditions were tested on AMOLED TFT glass. It was found that the roughness has large effect on the arcing defect quantity of TFT glass. The larger Sz (the maximum height of the profile) of mask surface, the more arcing defects were generated on the peripheral circuit. From the point discharge view, the influence of Sz on the peripheral circuit line was well explained. In order to avoid arcing defects in PECVD process, it was suggested to improve the mask surface roughness or decrease the hills height on mask surface.
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