Abstract
A top emitting organic light emitting diode‐on‐silicon (OLEDoS) panel with aluminum (Al) anode for high‐resolution microdisplays was proposed and fabricated. The low work function of the Al anode increases the energy barrier of the interface between the anode and hole injection layer (HIL), and has poor hole‐injection properties, which causes the low efficiency of the device. To enhance the hole‐injection characteristics of the Al anode, we applied optimized HIL and hole transportation layer (HTL) materials. The proposed single stack structure white OLED display panel with Al anode was fabricated on CMOS backplane and the white OLED device improved efficiency by up to 20 cd/A at 1000 nit, which is 90% of the level of conventional OLEDs with indium tin oxide (ITO) anode.
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