Abstract
AbstractWe developed and fabricated self‐aligned bottom gate LTPS backplanes without ion‐implantation process. CW green laser is used to fabricate polycrystalline silicon, and self‐alignment photo‐sensitive SiO coating film is used as a channel etch stopper. For high performance TFT backplanes, we developed CMOS process that allows us to operate CMOS circuits. Our developed TFT shows high mobility and high reliability.
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