Abstract
AbstractA high reliable amorphous silicon gate driver with shared dual pull‐down units is proposed and fabricated for large‐sized TFT‐LCD applications. A special unit in the driver is designed to generate bipolar pulse bias for low‐level holding TFTs to suppress the threshold voltage shift, which achieves 40.5% and 34.8% improvement compared with conventional DC and unipolar pulse bias respectively according to measurement results.
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