Abstract
Quantum Dot Light Emitting diodes (QLED) show promise in the development of next‐generation displays due to their unique properties, such as cost‐effective, large‐area, wide‐color‐gamut and long life‐time. However, the most studied bottom‐emitting device structure can't meet the requirements of high resolution and high information‐content active matrix (AM) display in the future. Here, top‐emitting blue QLEDs with capping layer (CPL) on top metal cathode were fabricated and characterized. The introduction of CPL can influence both the optical and electrical properties of the device, resulting in a remarkable current efficiency improvement. By optimizing the CPL thickness, we have achieved an almost 12‐fold efficiency improvement of top‐emitting blue QLEDs.
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