Abstract
Ln‐IZO based target was employed to deposit as a channel layer in amorphous Ln‐In‐Zn‐O thin‐film transistors. Here, we use the carrier/barrier bilayer stacked AOS TFTs to improve the mobility and stability. High mobility Ln‐oxide is for better charge transport. The barrier layer is fine‐tuned for better reliability. After optimization of the stacked structure of the active layer and the parameters of the PV SiO2 layer, the devices exhibited superior electric properties. The device shows high mobility (35.4 cm2/Vs) and small voltage shifts (1.1/‐1.5 V) of PBTS (positive bias temperature stress) and NBTIS (negative bias temperature illumination stress). We fabricated a 14 inch notebook liquid crystal display (LCD) with the Demux 1:3 circuit design using the high performance bilayer stacked TFTs.
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