Abstract
AbstractThe Hysteresis effects can be suppressed in flexible thin‐film transistors with poly (vinyl alcohol) insulator without crosslinking agent. The characteristic of hysteresis was greatly reduced by SiO2 nano‐particle in PVA solution. The TFTs were fabricated by using a‐IGZO as active layer at room temperature. The TFTs exhibited stable performance with field effect mobility (∼10.81 Vs/cm2), high on/off current ratios (∼106), and low threshold voltage (∼−1V) on planarized stainless steel substrate. The transfer curve which measured from various sweep ranges in two different sweep directions suggested that the hysteresis has been successfully suppressed.
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