Abstract
Post-crystallization heat-treatment of metal-induced laterally crystallized polycrystalline silicon thin film using YAG solid-state laser is characterized. It is found that both the material quality and the TFT performance are related to the laser-treatment condition. The amorphous silicon fraction remaining in the polycrystalline thin film can be reduced and the performance of the thin-film transistors fabricated on the laser-treated thin film under an optimized condition can be greatly improved.
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