Abstract
It is well known that amorphous oxide semiconductors (AOS) are of high mobility and reliable stability, especially indium‐gallium‐zinc oxide (IGZO). It is the most promising material applied in the manufacture of both displays and integrated circuits in the near future. Taking the advantages of electrical and flexible properties, in particular, IGZO TFT has drawn a great amount of attention. In our work, IGZO TFTs are fabricated on the hydroxylated polyethylene terephthalate (PET) substrate at the temperature of 180 °C, which is apparently lower than that in the conventional process. The experimental performance of the IGZO TFTs show that the mobility and on‐off ration are up to 8 cm2V−1s−1 and 105 respectively. In addition, an inverter based on IGZO TFTs has been achieved on the PET substrate, and its gain reaches the value of −20, showing its potential for flexible logic circuits based on oxide TFTs.
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