Abstract
Low‐temperature PECVD technology was used to fabricated inorganic layer in thin film encapsulation for AMOLED display. We systematically obtained SiNx films in different RF power. Stress and refractive index was characterized and analyzed to study the film performance. The results shows that different RF power leads to different film stress, and well‐designed stress‐matched multilayer SiNx will highly improve the TFE reliability. Furthermore, the RA life time (60 °C, 90% RH) of OLED displays with new multilayer SiNx inorganic layer TFE structure has been sharply increased from 240hours to 480hours.
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