Abstract
The etch damage caused by the conventional bench-top etching process makes it difficult to produce Nano-LED devices. Recently, some scholars have studied the use of ion injection to achieve electrical isolation between pixels for the purpose of pixelation. In this paper, we focus on the distribution characteristics of ions in GaN targets to improve the effective light-emitting area ratio of devices by reducing the lateral diffusion effect of ions.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
