P‐10.1: Electro‐optical properties investigation in AlGaInP‐based Red Micro‐LED devices

Abstract

AlGaInP‐based light‐emitting diode (LED) arrays are a promising technology in a wide range of applications. The electrical characteristics and current transport properties of AlGaInP‐based red micro‐light‐emitting diodes were investigated using current‐voltage (I‐V) measurements. The ideality factor of device was obtained, indicating that the current conduction mechanism is defect‐assisted tunneling, which forms parasitic current paths across the active region. These results were consistent with the parasitic resistances obtained from the measured current‐voltage curves. It was attributed that the defects originated from sidewall damage of the active layer. The EL spectrum of the red micro‐LED is characterized by narrow emission width of ~19 nm.