Abstract
The resistance of an In‐Ga‐Sn‐O (IGTO) film with a SiNx /SiOx passivation layer was found to decrease significantly by thermal annealing, due to hydrogen diffusion from the SiNx layer into the IGTO film through the SiOx layer. We propose a method that utilizes this “resistance‐reduction phenomenon” to reduce the effective channel length in IGTO thin‐film transistors with a SiNx /SiOx passivation layer by the partial formation of a low‐resistance region in the IGTO film. The method is experimentally validated, and we show that even shorter channel lengths can be achieved by employing a SiNx /SiOx layer as an etch‐stop layer.
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