Abstract
The application of metal oxide thin‐film transistors (TFTs) in the field of flexible displays is particularly constrained by the critical fabrication process temperature. In this work, InSnZnO (ITZO) TFTs are optimized based on an ultra‐low‐temperature annealing process. When the annealing temperature and time are respectively set to 100 ° C and 560 h, ITZO TFTs exhibit decent device electrical characteristics with field‐effect mobility of ~14.59 cm2V‒1s‒1, subthreshold swing of ~0.39 mV/dec, and on/off current ratio of ~7.12 × 108. The test results provide the experimental basis of ITZO TFTs for further flexible applications.
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