Abstract
In this paper, top‐gate self‐aligned a‐IGZO TFTs with copper light shield layer were fabricated. In order to prevent Cu oxidation phenomenon, a SiNx buffer interlayer layer was added. TFT with SiNx buffer interlayer shows excellent VTH uniformity on Gen. 4.5 glass and good PBTS and NBTIS reliability. After these optimization of the thickness of SiNx layer, the Vth shift of PBTS and NBTIS could be improved to 0.5 V and ‐0.8 V.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
