Abstract
a‐IGZO TFT devices are receiving great attention, not only the new display applications require higher mobility, but still need to overcome shortcomings such as high threshold voltage and high sub‐threshold swing. In this work, a double‐layer gate dielectric (Ta2O5/SiO2) a‐IGZO TFT device is proposed and compared with a single‐layer gate dielectric (SiO2) device. The results appeal that the mobility is effectively improved, the sub‐threshold swing is reduced, the On‐Off current ratio is increased, and the operating voltage is small. Comparisons of single‐layer and double‐layer gate dielectric structures are discussed through energy bandgap analysis. COMSOL simulations and analysis of the electric field and potential distributions of the devices are carried out to explain the reason for the performance improvement in principle.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
