Abstract
The 0 2 /N 2 flow ratio during O 3 generation by dielectric barrier discharge has a large impact on the atomic layer deposition (ALD) of metal oxides in a hot wall ALD reactor. For HfO 2 ALD using HfCl 4 as a metal precursor, a higher growth per cycle and a broader ALD temperature window are obtained when N 2 is added to the O 2 supply of the O 3 generation. A positive impact of N 2 in the 0 3 generation is also observed for ZrO 2 and La 2 O 3 ALD. A negative impact is observed for Al 2 O 3 ALD: The Al 2 O 3 thickness is reduced for those conditions for O 3 where Hf0 2 ALD is enhanced.
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