Abstract
Emitter formation of crystalline silicon solar cells by inline diffusion can be affected by non-uniformities in dopant deposition prior to the furnace due to insufficient wetting of hydrophobic surfaces. The impact of dissolved ozone treatment after texturing has been investigated with respect to the possibility of improving the emitter formation with a low cost process enhancement. The chemically grown thin oxide improves wetting capability without modification of other surface characteristics that can impact cell efficiency. It could be shown that already low concentrations of ozone in UPW prior to phosphorus doping improve the sheet resistance uniformity on Cz-Si and multi-crystalline Si solar cells between 30 and 100 % compared to HF last treated ones.
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