Abstract
The depth distributions of oxygen-related defects in separation-by-implanted oxygen wafers were determined from measurements of Doppler broadening spectra of the annihilation radiation. Vacany–oxygen complexes were introduced by implanting 180-keV oxygen at (2–6)×1017 cm−2 into Si substrates. Their sizes decreased below the subsurface region (<100 nm) because an agglomeration of vacancy-type defects was suppressed by the interaction between vacancies and oxygen atoms. As the dosage was increased, in the region near the projected range of oxygen, atomic rearrangement of vacancy-type defects occurred, and this rearrangement is considered to introduce SiOx (x<2) that is stable at high annealing temperatures. Oxygen-related defects were presented in the superficial Si layer even after annealing at 1350 °C. The concentration of such defects was low when the substrate was implanted with a dose of 4×1017 cm−2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
