Abstract
The oxygen requirements for the successful growth of YBa2Cu3O7 thin films have been studied. Good quality films can be produced at much lower pressures than suggested by the data of Bormann and Nolting. The main benefit from the use of atomic oxygen is during cooling after growth rather than during growth itself. Epitaxial Y2O3 overlayers inhibit oxygen diffusion into smooth YBa2Cu3Ox films.
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