Abstract
We have investigated theoretically the cause of the substantial threshold voltage ( V th) shifts observed in Hf-related high- k gate stacks with p+poly-Si gates, by focusing on the ionic nature of HfO 2. The oxygen vacancy (Vo) level in ionic HfO 2 is located in a relatively higher part of the band gap. This high position of the Vo level results in a significant elevation of the Fermi level for p+poly-Si gates, if the p+poly-Si gate is in contact with the high- k HfO 2. Vo formation in the HfO 2 induces a subsequent electron transfer across the interface, causing a substantial V th shifts in p+poly-Si gate MISFETs. Moreover, our theory also systematically reproduces other recent experimental results.
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