Abstract
Oxygen vacancy in different oxide systems shows up as a crucial parameter in modulation of the emerging application-oriented functionalities. A systematic exploration on the relation between oxygen vacancy and electronic structure of the La0.2Sr0.8MnO3 (LSMO) thin film has been carried out through sequential surface treatments followed by a series of wide scan XPS, O 1s XPS, O-K edge XAS, Mn-L edge XAS and work function measurements. Experimental results demonstrate mutual corroborative certifying evidences in between the different photoemission spectral measurements on the evolution and influence of the oxygen vacancy. Spectral characteristic features observed in the work are applicable using as justification fingerprint for the existence, modulation, or elimination of the oxygen vacancy in similar perovskite type oxide systems.
Highlights
Transition metal oxides of ABO3 perovskite crystal structure have flourished with the plethora of fascinating physical functionalities since the discovery of the copper based high temperature superconductors in the 1980’s and the colossal magnetoresistance of manganese oxides in the 1990’s
We present a systematic study on the La0.2Sr0.8MnO3 (LSMO) thin film taking it representative for the La doped manganite ABO3 systems
For example for the spectra I, the sample surface is treated as first step by cleaning through organic solvent microwave washing and as result the in surface oxygen vacancy is covered by physisorption and chemisorption as described in the Table I, the surface is of VCPC
Summary
Transition metal oxides of ABO3 perovskite crystal structure have flourished with the plethora of fascinating physical functionalities since the discovery of the copper based high temperature superconductors in the 1980’s and the colossal magnetoresistance of manganese oxides in the 1990’s. These functionalities are realized or enhanced by doping either in the A or B site atoms with a series of alkalies, alkaline earths or rare earth metal atoms. The vacancy being a controllable parameter can be tuned by crystal strain or oxygen partial pressure during the thin film growth process, and by high temperature annealing, electric-field exertion, or chemical oxidation-reduction. Experimental results show that oxygen vacancy under various environments leads to coordinated variation in the electronic structure of surrounding elements by modifying electron density of state distribution
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