Oxygen Vacancy in TiO2: Production Methods and Properties

Abstract

Titanium dioxide (TiO2) is a versatile material used in a variety of applications, including photocatalysis, photovoltaics, sensing, and environmental remediation. The properties of TiO2 are influenced by its defect disorder, with oxygen vacancy (V0) being a prominent defect that has been widely studied. Defective TiO2 materials, particularly those containing V0 defects, are of interest for the development of next-generation semiconducting nanomaterials. Several methods, including high-temperature calcination, ion implantation, and chemical doping, are used to produce defective TiO2 with varying degrees of V0 defects. The properties of defective TiO2, including optical, electronic, and structural characteristics, are essential for determining the material’s suitability for various applications. Modification of the defect structure of TiO2 through doping with impurities can enhance the photocatalytic activity of the material. Researchers continue to investigate the impact of factors such as crystal structure and the presence of other defects on the properties of TiO2-based materials, further enhancing their potential for various applications. Overall, a deeper understanding of defect disorder and the development of production methods for defective TiO2 will play a crucial role in the design and production of next-generation semiconducting nanomaterials.