Oxygen-tolerant operation of all-solid-state ionic-gating devices: advantage of all-solid-state structure for ionic-gating

Abstract

The oxygen-tolerant operation of ionic-gating has been achieved by all-solid-state ionic devices with a nano-grained Yttria-stabilized ZrO2 (YSZ) proton conductor/SrTiO3 (STO) single crystal. The drain current of the transistor was well tuned, even under atmospheric conditions (including approximately 200 mbar of oxygen gas), in contrast to STO-based ionic-gating transistors composed of ionic liquids, in which carrier doping is completely suppressed by even a small amount of oxygen gas (0.1 mbar). This oxygen-tolerance is attributed to the gas-tight nature of all-solid-state devices. Furthermore, complete suppression of metallization in the presence of oxygen gas, which was previously seen as evidence of electrochemical carrier doping (ECCD), was found to be unrelated to the type of carrier doping, i.e. electrostatic carrier doping or ECCD. The oxygen-tolerant operation achieved by all-solid-state ionic-gating devices is a great advantage for practical applications.