Abstract
The oxygen content of heat‐treated and quenched samples has been analyzed by the SIMS technique in order to investigate the temperature dependence of the equilibrium . A phase was predicted by thermodynamical calculations and also verified experimentally. This phase appears in equilibrium with a melt of lower oxygen content than the phase and, when formed, determines the oxygen content of the melt. The existence of the phase in a Czochralski silicon crystal growth system was confirmed and the implications are briefly discussed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
