Abstract
In this paper oxygen sensor based on gallium oxide thin films has been analyzed. The gallium oxide thin films were prepared by rf magnetron sputtering from a powder target using Ar as the sputtering gas. The sensing characteristics (stability, sensitivity and response time) of the oxygen sensor were investigated at 1000 °C. At high temperatures gallium oxide thin films behaves like an n-type semiconductor due to an oxygen deficit. The thin films obtained by this method have a higher electrical conductivity due to a higher oxygen vacancy concentration. Two sensors with different geometries were investigated, one using interdigital electrodes and one using a sandwich structure with a mesh type electrode on the top. Response times of about 14 s can be achieved for low oxygen concentrations using first type sensor and about 27 s for the second type. The mechanism of oxygen sensing in sputtered gallium oxide films is also discussed.
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