Abstract
The formation of nanopipes in GaN has been linked to impurity segregation. In this paper, a combination of high angle annular dark field imaging and electron energy loss spectroscopy in the Daresbury SuperSTEM is used to investigate the core structure and composition of open core dislocations (nanopipes) in GaN films grown by hydride vapour phase epitaxy. The results show evidence for segregation of oxygen to the nanopipe surfaces. Quantitative analysis suggests that up to several monolayers of nitrogen can be replaced by oxygen. The implications of these results for understanding the electrical properties and core structure of dislocations in GaN are discussed.
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