Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2 Ferroelectric Film (Adv. Electron. Mater. 11/2022)

Abstract

Metal–Ferroelectric–Insulator–Semiconductors The Ti-inserted top electrode structure is efficiently utilized to induce the oxygen scavenging effect at the interfacial layer of a semiconductor-based ferroelectric device. The Al-doped HfO2 ferroelectric film with the high crystallization annealing temperature triggers a more active decomposition process at the interfacial layer to enhance the ferroelectric switching and also reduce the interface trap density, leading to a more reliable device operation. More details can be found in article number 2200310 by Cheol Seong Hwang and co-workers.