Abstract
18O(200 keV, 2.0*1017 cm-2) has been implanted at 6 K into an 'as implanted' SIMOX wafer (silicon implanted with 16O at 200 keV, 1.8*1018 cm-2 and 500 degrees C). In situ Rutherford backscattering measurements at 6 K, 77 K and room temperature indicate approximately 15% excess oxygen above the stoichiometric value for SiO2 in the buried-oxide layer. Additional room-temperature measurements were carried out off-line by infrared and secondary ion mass spectrometries. A comparison of the original SIMOX material with the sample implanted with 18O at 6 K leads to the conclusion that during warm up the 18O concentration depth profile remains essentially unchanged with the maximum total concentration remaining above the original 16O value. The infrared measurements indicate that all of the oxygen atoms are bound to silicon atoms.
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